- Transistor Current Components Definition: The current components in a transistor include emitter current (IE), base current, and collector current.
- Emitter Current (IE): Emitter current (IE) is composed of hole current (IhE) and electron current (IeE), with hole current being dominant in PNP transistors.
- Collector Current (IC): Collector current (IC) in a PNP transistor is influenced by the holes reaching the collector junction and can be equal to the reverse saturation current (ICO) when the emitter circuit is open.
- Recombination in Base: Holes recombine with electrons in the base, and remaining holes contribute to the hole current component (IhC) at the collector junction.
- Current Gain Parameters: The DC current gain (αdc) and small signal current gain (αac) are key parameters for common base transistors, both always positive and less than unity.
In NPN transistors, current is the electron flow; in PNP devices it is the hole flow, so the two polarities send current in opposite directions. The parts below are the current components of a common-base PNP transistor. The emitter-base junction (JE) is forward biased and the collector-base junction (JC) is reverse biased.
Current enters through the emitter. That total is the emitter current (IE). It has two parts: Hole current (IhE) and Electron current (IeE). IeE is electrons moving from base to emitter. IhE is holes moving from emitter to base.
In production devices the emitter is doped far more than the base, so the electron current is small next to the hole current. Almost all of the emitter current is then holes crossing from emitter to base.
Some of the holes which are crossing the junction JE (emitter junction) combines with the electrons present in the base (N-type). Thus, every holes crossing JE will not arrive at JC. The remaining holes will reach the collector junction which produces the hole current component, IhC. There will be bulk recombination in the base and the current leaving the base will be
Electrons in the base lost due to recombination with holes injected across JE are refilled by incoming electrons. Holes arriving at the collector junction (JC) will cross into the collector region.
When the emitter circuit is open circuited, then IE = 0 and IhC = 0. In this condition, the base and collector will perform as reverse biased diode. Here, the collector current, IC will be same as reverse saturation current (ICO or ICBO).
ICO is in fact a small reverse current which passes through the PN junction diode. This is due to thermally generated minority carriers which are pushed by barrier potential. This reverse current increase; if the junction is reverse biased and it will have the same direction as the collector current. This current attains a saturation value (I0) at moderate reverse biased voltage.
When the emitter junction is at forward biased (in active operation region), then the collector current will become
The α is the large signal current gain which is a fraction of the emitter current which comprises of IhC.
When the emitter is at closed condition, then IE ≠ 0 and collector current will be
In a PNP transistor, the reverse saturation current (ICBO) will comprises of the current due to the holes passing through the collector junction from the base to collector region (IhCO) and the current due to the electrons which are passing through the collector junction in the opposite direction (IeCO).
The total current entering into the transistor will be equal to the total current leaving the transistor (according to Kirchhoff’s current law).
Parameters Related to Current Components
DC Current gain (αdc): If the 
then 
This can be referred as dc current gain of common base transistor. This will be always positive and it will be less than unity.
Small Signal Current Gain (αac):
with collector base voltage constant (VCB). It is always positive and it will be less than unity.
